SEMIX202GB12E4S ? by semikron rev. 1 ? 20.02.2009 1 semix ? 2s gb trench igbt modules SEMIX202GB12E4S features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications ? ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c ? dynamic values apply to the following combination of resistors: r gon,main = 1,0 ? r goff,main = 1,0 ? r g,x = 2,2 ? r e,x = 0,5 ? absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 175 c t c =25c 314 a t c =80c 242 a i cnom 200 a i crm i crm = 3xi cnom 600 a v ges -20 ... 20 v t psc v cc = 800 v v ge 20 v v ces 1200 v t j = 150 c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 229 a t c =80c 172 a i fnom 200 a i frm i frm = 3xi fnom 600 a i fsm t p = 10 ms, sin 180, t j =25c 990 a t j -40 ... 175 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =200a v ge =15v chiplevel t j =25c 1.8 2.05 v t j = 150 c 2.2 2.4 v v ce0 t j =25c 0.8 0.9 v t j = 150 c 0.7 0.8 v r ce v ge =15v t j =25c 5.0 5.8 m ? t j = 150 c 7.5 8.0 m ? v ge(th) v ge =v ce , i c =7.6ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j = 150 c ma c ies v ce =25v v ge =0v f=1mhz 12.3 nf c oes f=1mhz 0.81 nf c res f=1mhz 0.69 nf q g v ge =- 8 v...+ 15 v 1130 nc r gint t j =25c 3.75 ? t d(on) v cc = 600 v i c =200a r g on =2.4 ? r g off =2.4 ? di/dt on = 3600 a/s di/dt off = 2100 a/s t j = 150 c 253 ns t r t j = 150 c 55 ns e on t j = 150 c 22 mj t d(off) t j = 150 c 533 ns t f t j = 150 c 113 ns e off t j = 150 c 27.9 mj r th(j-c) per igbt 0.14 k/w
SEMIX202GB12E4S 2 rev. 1 ? 20.02.2009 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =200a v ge =0v chip t j =25c 2.2 2.52 v t j = 150 c 2.1 2.5 v v f0 t j =25c 1.1 1.3 1.5 v t j = 150 c 0.7 0.9 1.1 v r f t j =25c 4.0 4.5 5.1 m ? t j = 150 c 5.3 6.3 6.8 m ? i rrm i f =200a di/dt off = 3400 a/s v ge =-15v v cc = 600 v t j = 150 c 160 a q rr t j = 150 c 31.5 c e rr t j = 150 c 12 mj r th(j-c) per diode 0.26 k/w module l ce 18 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c = 125 c 1m ? r th(c-s) per module 0.045 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 250 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 2s gb trench igbt modules SEMIX202GB12E4S features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications ? ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c ? dynamic values apply to the following combination of resistors: r gon,main = 1,0 ? r goff,main = 1,0 ? r g,x = 2,2 ? r e,x = 0,5 ?
SEMIX202GB12E4S ? by semikron rev. 1 ? 20.02.2009 3 fig. 1: typ. output ch aracteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SEMIX202GB12E4S 4 rev. 1 ? 20.02.2009 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching times vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
SEMIX202GB12E4S ? by semikron rev. 1 ? 20.02.2009 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 2s gb
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